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IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package

CHINA TOP Electronic Industry Co., Ltd. zertifizierungen
CHINA TOP Electronic Industry Co., Ltd. zertifizierungen
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IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package

IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package
IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package

Großes Bild :  IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package

Produktdetails:
Herkunftsort: China
Markenname: Infineon
Zertifizierung: CE, GCF, ROHS
Modellnummer: IRF5305PBF
Zahlung und Versand AGB:
Min Bestellmenge: 1
Preis: negotiable
Verpackung Informationen: Zuerst in Originalschale verpackt, dann Carton, endlich Bubble Bag für das äußere Verpacken
Lieferzeit: 3-5 Arbeitstage nach Erhalt der Zahlung
Zahlungsbedingungen: T/T, Western Union,
Versorgungsmaterial-Fähigkeit: 1000 Stück pro Monat
Ausführliche Produkt-Beschreibung
Typ: IGBT-MODUL Paket: neu und originalF00R12KT4: 1200V 200A IGBT-Modul, niedriger VCE(sat), hohe Kurzschlussfestigkeit, ge
Zustand: Neu und Original Bleifreier Status: Rohs-konform
Versand per: DHL\UPS\Fedex\EMS\HK Post, DHL, UPS, Fedex und EMS

IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package


Features

  • P-Channel Enhancement Mode – Simplifies high-side switching without requiring a charge pump or level shifter.

  • -55V Drain-Source Voltage (Vdss) – Suitable for 12V, 24V, and 48V automotive and industrial bus systems.

  • -31A Continuous Drain Current (Id) – Handles moderate to high current loads safely.

  • 65mΩ Max Rds(on) – Low conduction loss improves efficiency and reduces heat generation.

  • Logic-Level Gate Drive – Fully enhanced with Vgs = -5V to -10V, compatible with 3.3V/5V microcontrollers.

  • Fast Switching Speed – Low gate charge (Qg = 63nC typical) minimizes switching losses in PWM applications.

  • RoHS-Compliant & Lead-Free – "PBF" suffix indicates environmentally friendly, lead-free terminations.

 

Applications 

  • Reverse Polarity Protection – Protects DC input circuits from accidental battery reversal in automotive and portable devices.

  • Battery Management Systems (BMS) – High-side disconnect for Li-ion, LiFePO4, and lead-acid battery packs.

  • Load Switches – Enables/disables power to modules, sensors, or peripheral circuits in embedded systems.

  • DC Motor Control – Low-frequency PWM speed control for small brushed motors (power tools, pumps, fans).

  • Power Supply Selection – Switches between primary and backup batteries or AC adapter inputs.

  • LED Driving – High-side dimming control for automotive lighting, signage, and industrial lamps.

  • Solar Charge Controllers – Disconnect function for panels or batteries in low-power off-grid systems.

 

Description

The IRF5305PBF is a P-Channel power MOSFET utilizing advanced HEXFET® technology. Housed in a industry-standard TO-220 package, it is designed for high-efficiency switching applications requiring low on-state resistance and fast switching performance. With a drain-source voltage rating of -55V and continuous drain current of -31A, this device is ideal for load switching, battery protection, and power management circuits where a positive ground or high-side P-channel switch is preferred. The logic-level gate drive simplifies interface with microcontrollers and low-voltage control circuits.

 

INFORMATION

category
Discrete semiconductor products
Transistors
FACT,MOSFET
单 DONE,MOSFET
Vgs(th) for different IDs (maximum)
4V @ 250µA
manufacturer
Infineon Technologies
Gate charge (Qg) at different Vgs (max)
63 nC @ 10 V
series
HEXFET®
Vgs (max)
±20V
Packaging
Pipe fittings
Input Capacitance (CIS) at Different Vds (Max)
1200 pF @ 25 V
Part status
On sale
Power Dissipation (Max)
110W(Tc)
FET type
P channel
Operating temperature
-55°C ~ 155°C(TJ)
Technology
MOSFETs (Metal Oxides)
Mounting type
Through hole
Drain Source Voltage (Vdss)
55 V
Vendor device packages
TO-220AB
Current at 25°C - Continuous Drain (ID)
31A(Tc)
Package/Enclosure
TO-220-3
Drive Voltage (Max RDS On, Min RDS ON)
10V
Base product number
IRF5305
On-resistance at different IDs and Vgs (max)
60 mOhm @ 16A, 10V

 

Drawing

IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package 0

Our advantage :phones, PDAand#39;s, notebook comput.ers

  • High quality products --- our offers are 100% new and original, ROHS
  • Competitive price --- good Purchase channels with good price.
  • Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
  • Adequate inventory --- With the support of our strong Purchasing team,
  • Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

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Product List
Supply a Series of Electronic Components, full range of semiconductors, active andamp; passive Components.We can help you to get all for bom of the PCB,IN a word, you can get one-stop solution here,


The offers including:
Integrated Circuit, Memory ICs, Diode, Transistor , Capacitor, Resistor, Varistor, Fuse, Trimmer andamp; Potentiometer, Transformer, Battery, Cable, Relay, Switch, Connector, Terminal Block, Crystal andamp; Oscillator, Inductor, Sensor, Transformer, IGBT Driver, LED,LCD, Convertor, PCB (Printed Circuit Board),PCBA (PCB Assembly)

Strong in Brand:
Microchip, MAX, AD, TI, ATMEL, ST, ON, NS, Intersil, Winbond, Vishay, ISSI, Infineon, NEC, FAIRCHILD, OMRON,YAGEO, TDK, etc

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Kontaktdaten
TOP Electronic Industry Co., Ltd.

Ansprechpartner: Mrs. Natasha

Telefon: 86-13723770752

Faxen: 86-755-82815220

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